Innoscience Launches 650 V GaN Power Transistor for Enhanced Efficiency in Power Conversion
Innoscience Introduces High-Performance 650V GaN-on-Silicon MOSFET
BonChip Electronics, a leading distributor of Innoscience's power semiconductor solutions, is excited to announce the availability of the INN650TA030AH enhancement-mode power transistor. This innovative device offers exceptional performance, efficiency, and reliability for demanding power electronics applications.
Key Features and Benefits
- Enhancement Mode Operation: Provides a normally-off power switch for safe and efficient operation.
- Ultra-High Switching Frequency: Enables compact and efficient power conversion systems.
- No Reverse-Recovery Charge: Reduces switching losses for improved efficiency.
- Low Gate and Output Charge: Minimizes energy loss during switching.
- Industry-Standard Compliance: Meets JEDEC standards for industrial applications and includes ESD safeguards.
- Wide Range of Applications: Suitable for AC-DC converters, DC-DC converters, totem pole PFC, fast battery charging, and high-density power conversion.
Ideal for Demanding Applications
The INN650TA030AH is well-suited for a wide range of applications requiring high efficiency, compact design, and reliable performance.
BonChip Electronics offers the INN650TA030AH and a wide range of Innoscience's power semiconductor solutions, providing customers with expert technical support and fast delivery.
Stichworte:
Innoscience,
GaN-on-Silicon MOSFET,
enhancement-mode,
high-performance,
power conversion
